In this paper Two Dimensional wave propagation is used for power combining in drain nodes of a Distributed Amplifier (DA). The proposed Two Dimensional DA uses an electrical funnel to add the currents of drain nodes. The proposed structure is modified due to gate lines considerations. Total gain improvement is achieved by engineering the characteristic impedance of gate lines and also make appropriate variation in the output of gain cells. All variations are done with respect to input and output reflection loss considerations. Analytical expression for the gain of the proposed DA is presented and design considerations for electrical funnel are discussed. Based on Two Dimensional power combining a wide band DA is simulated using TSMC 0. 18 CMOS model in ADS which consumes 49. 42 mw from 1. 2V power supply. Good agreement between the proposed DA gain and calculated value is achieved. Although one stage DA is used, the final results yield a high figure of merit (FOM) in 0. 18 CMOS technology. The final design shows 11. 1 dB gain from near DC to 23. 6 GHz, noise figure between 3 to 5. 2dB and maximum output power of 7. 1dBm at 1-dB output compression point (OP1dB).

A novel technique for a self-equalized Distributed Amplifier is presented by showing the analogy between transversal filters and Distributed Amplifier topologies. The appropriate delay and gain coefficients of Amplifier circuit are obtained by a Fourier expansion of the raised cosine spectrum in the frequency range of 0-40GHz.

In this paper a new method for the design of a linear phase Distributed Amplifier in 180nm CMOS technology is presented. The method is based on analogy between transversal filters and Distributed Amplifiers topologies. In the proposed method the linearity of the phase at frequency range of 0-50 GHz is obtained by using proper weighting factors for each gain stage in cascaded Amplifier topology. These weighting factors have been extracted using MATLAB software. Finally, by plotting the frequency response of the Amplifier resulted from MATLAB code and also simulation from ADS, the phase linearity of the designed Amplifier is shown.

In this paper, a Distributed Amplifier (DA) by using HEMT technology for ultra-wideband application is presented.Creation of Distributed integrated circuit has been investigated for approximately seventy years rapidly to developing semiconductor process technologies in the modern IC design. By using of this method, multiple parallel signals are combined and obtain to increase the bandwidth, enhanced power combining amplitude, and novel design capabilities for IC process. The circuit was designed and simulated in ED02AH technology by using ADS2010. The 4-stage design achieves 15.5 dB of power gain (± 0.5 dB) from 3.1 to 10.6 GHz. Reflected power of the input and output from loads matched to 50 Ohm are all below -10 dB over the bandwidth of the device, as is power transmitted from the output to the input. The device is stable for a wide range of input and output loads.

In this paper, a low power 2×3 matrix Distributed Amplifier (DA) with tapper transmission lines is introduced in 180 nm CMOS technology. The matrix structure is used to provide the mechanisms of multiplication and additive of the current for increasing the gain and reducing the power consumption. In the input stage, a controllable cascade gain cell is used to expand the bandwidth and remove to need the additional capacitors in the input gate and central transmission lines. Moreover, the terminating resistor of the input gate transmission line is replaced with an RL neTwork. The proposed Distributed Amplifier is designed and simulated using TSMC 0.18 µm CMOS technology in Cadence Spectre-RF over the frequency of 1-30 GHz. Operated at 1 V, the proposed DA consumes 25.16 mW. Simulation results show that the proposed DA achieves a direct power gain (S21) of 12±1 dB with an average NF of 5.75 dB and average IIP3 of -6.11 over the 1–24 GHz band of interest. The input and output return losses are also more than 10 dB.

In this paper, a new structure composed of a negative capacitance and resistance is presented in order to increase gain and bandwidth of Distributed Amplifiers. The proposed structure is used at the gate transmission line of the Distributed Amplifier and the obtained circuit has been simulated using 0.13mm CMOS model. The negative capacitance at the gate transmission line decreases parasitic effects of gain cells and increases Amplifier bandwidth and accordingly increases voltage gain. The generated negative resistance decreases transmission lines losses and increases bandwidth. Simulated voltage gain is 15dB with ±0.5odB gain flatness over 0.5-49 GHz frequency band. Circuit input and output are matched with 50Ω resistance; and input and output return losses are -8.15 dB and -9.2 dB, respectively. This circuit has a noise figure less than 4.6 and its power consumption is 99 mW from 1.8 V power supply.

Pseudo-differential Distributed Amplifier (PDDA) is an effective method in increasing the bandwidth of a broadband Amplifier. This study investigates different methods with same power consumption and chip area for enhancement gain-bandwidth in a cascaded pseudo differential Distributed Amplifier (CPDDA) and compare them. The choice of optimal design depends on the gmRo parameter of the PDA cells. The proposed circuits have been implemented in 0. 18-μ m RF-CMOS technology. The simulation results show that in this technology, in order to obtain a 0-40GHz bandwidth that requires low gmof the PDA's cell-transistor, Two cascaded PDDA with three stages has a better performance than a three cascaded PDDA with Two stages. In Two cascaded PDDA with three stages structure, a gain of 10dB can be achieved in the bandwidth of 40GHz in 0. 18-μ m RF-CMOS technology. In this Amplifier, parameters S11, S22, S12, are-12,-10, and-16 dB, respectively and noise figure is equal to 4. 6 and P1dB is +3. 5dBm. This Amplifier has 230mW power consumption and a chip area of 0. 63 mm2. These values show the good performance of the proposed Amplifier, compared to the results of previous works on similar Amplifiers.

In this paper, we analyze a Distributed Amplifier based on input/output attenuation compensation. The analysis is carried out for a HEMT transistor; and a constant-k section filter is used to calculate the Amplifier’s characteristics such as attenuation factor, phase constant and gain. The proposed design approach enables us to examine the tradeoff among the variables, which include the type and the number of devices, and the impedance and cutoff frequency of the lines. Consequently, we arrive at a design which gives the desired frequency response with significant bandwidth enhancement of around 70% with about 10% increase in circuit size. The simulation carried out by Advance Design System (ADS) software. Excellent agreement is shown when the theoretically predicted response of a typical Amplifier is compared with the result of the computer-aided analysis (simulation).

In this paper, analysis, simulation and design of a Distributed Amplifier (DA) with 0.13mm CMOS technology in the frequency range of 3-40 GHz is presented. Gain cell is a current reused circuit which is optimum in gain, noise figure, bandwidth and also power dissipation. To improve the noise performance in the frequency range of interest, a T-matching low pass filter LC neTwork is utilized at the input gate of the designed Amplifier. By this means, the proposed cascaded DA shows about 28% improvements in noise figure and 20% improvement in the gain compared with those of the other well-known configuration. To show the capability of the proposed method we also compared the figure of merit of the proposed Amplifier with those obtained with the other researches and showed that this figure is around 38% higher than that of those achieved by other researchers. The figure of merit includes gain, bandwidth, power consumption and also noise figure.

Usually, by modeling the structures using the finite element method, their undamped free vibration frequencies are calculated analytically. In addition, the issue of accurate calculation of natural frequencies and the shape of vibration modes corresponding to them for bending systems that have Distributed mass and elasticity and possibly a combination of several bending beams, sometimes requires solving complex mathematical equations and requires a relatively heavy mathematical work demands. Bending beams are beams whose axial deformations is insignificant compared to their bending deformations, and as a result, these members are assumed to be axially rigid. By using the conventional finite element method, the natural vibration frequencies of these beams can be obtained approximately. By increasing the number of finite elements used in the model, the calculation error of natural frequencies of vibration decreases. When the consistent-mass matrix is used, the frequency values obtained from the finite element method converge to the exact frequency values with larger values, while if the lumped-mass matrix is used, the frequency values obtained from the finite element method converge to the exact frequency values with smaller values. It should be noted that the consistent-mass matrix is non-diagonal, but the lumped-mass matrix is diagonal. The interpolation functions (shape functions) used for bending finite elements (beam elements) are polynomial functions of the 3rd degree. This bending finite element has Two nodes, each node has one translational degree of freedom and one rotational degree of freedom. The new idea that came to the authors of this article is that instead of using polynomial functions, trigonometric and exponential interpolation functions are used to calculate the stiffness matrix and mass matrix of the finite element. In fact, these trigonometric and exponential functions are the solutions of the differential equation governing the free vibration of bending beams with Distributed mass and elasticity. The argument of these trigonometric and exponential functions includes a parameter called beta, which is proportional to the square root of angular frequency of the bending beam. By changing this parameter in a suitable range and with a certain step, it is possible to plot the changes in the frequencies of the different modes of the studied prismatic beam in terms of beta. In this paper, three models were studied, which included a uniform cantilever beam, a uniform beam clamped at left side and simply supported at right side, and a uniform beam free at both ends. Using the conventional finite element method and using the consistent-mass matrix, these three models were analyzed and the approximate frequencies of the first few modes of these beams were calculated, which were greater than their corresponding exact values. In the innovative method presented in this article, a uniform beam was modeled with a finite element model with one translational degree of freedom and one rotational degree of freedom. The stiffness matrix and the mass matrix of this beam were calculated for different betas and having these Two matrices, the first and second frequency values of this model were calculated for different beta values and its graph was drawn for different betas. The values of the maximum frequency of the first frequency are the same as the values of the minimum frequency of the second for certain betas, and by specifying these betas, the frequencies of different vibration modes can be accurately determined. The detected frequencies of different modes with this method had a very good match with their exact corresponding frequencies. For the second model investigated in this paper, one rotational degree of freedom was considered. Considering that this beam had only one rotational degree of freedom, therefore, by plotting the first frequency of this model for different betas and finding its minimum, the frequency values of different modes of this beam were obtained, which matched the exact values like the previous model very well. The third model was the same as the previous Two models. The diagram of the first to fourth natural frequencies of this model was drawn for different betas. By having the approximate values of the frequencies of different modes obtained from the conventional finite element method and these diagrams, the frequencies of different modes of the model were identified, which were in good agreement with their corresponding exact values.